PART |
Description |
Maker |
SBRT2M10LP |
2A Trench SBR TRENCH SUPER BARRIER RECTIFIER
|
Diodes
|
FGA25N120ANTD |
1200V NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology 1200V NPT Trench IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
60CTT015 |
30 A, 15 V, SILICON, RECTIFIER DIODE, TO-220AB TRENCH SCHOTTKY RECTIFIER 15V 60A Trench Schottky Discrete Diode in a TO-220 package
|
VISHAY SEMICONDUCTORS IRF[International Rectifier]
|
ISL9N303AS3ST ISL9N303AS3 ISL9N303AP3 N303AS N303A |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 30A 40V 250A-Ifsm 0.55Vf 1A-IR D2PAK 800/REEL-13 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m N-Channel Logic Level UltraFET Trench MOSFETs 30V 75A 3.2m N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?/a>
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
CM100TU-12F |
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/600 Volts Trench Gate Design Six IGBTMOD⑩ 100 Amperes/600 Volts Trench Gate Design Six IGBTMOD 100 Amperes/600 Volts 240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
BSS138PW |
60 V, 320 mA N-channel Trench MOSFET 60 V, 360 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
FGD4536 FGD4536TM |
360V PDP Trench IGBT 360 V PDP Trench IGBT
|
Fairchild Semiconductor
|
FDB86360-F085 FDB86360F085 |
N-Channel Power Trench MOSFET 80V, 110A, 1.8mOhms N-Channel Power Trench? MOSFET
|
Fairchild Semiconductor
|
CM75DU-12F |
Trench Gate Design Dual IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
CM150TU-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts 240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
CM200TU-5F |
Trench Gate Design Six IGBTMOD?/a> 200 Amperes/250 Volts Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts Trench Gate Design Six IGBTMOD 200 Amperes/250 Volts Trench Gate Design Six IGBTMOD200 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
FDMC2674_07 FDMC2674 FDMC267407 |
N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mヘ
|
FAIRCHILD[Fairchild Semiconductor]
|